Two product families covering the SWIR and visible wavelength ranges that have eluded the industry for 30 years.
Across SWIR and visible wavelengths, our two product families cover three high-growth markets.
The world's first high-performance, cost-effective short-wave infrared VCSEL — eye-safe, high signal-to-noise, manufactured using mature InP telecom foundries.
Resonant-cavity LEDs combining the affordability of standard LEDs with superior optical quality — narrower beam, lower etendue, and higher spectral purity.
Short-wave infrared vertical-cavity surface-emitting laser — the world's first manufacturable SWIR VCSEL using a homoepitaxial nanoporous InP DBR. Eye-safe, high signal-to-noise, and compatible with existing compound semiconductor foundries.
SWIR VCSEL with mW operating power and PCE over 27%. Currently available at 1,380 and 1,680 nm in single- and multi-mode (custom wavelengths by demand).
High-speed InP VCSEL optimised for mid-board and rack-to-server optical interconnects.
Multi-aperture VCSEL array for long-range sensing, automotive LiDAR, and demanding industrial applications requiring high power density.
A resonant-cavity LED operating across the visible blue-green spectrum with high spectral purity and strong directionality compared to standard broadband LEDs.
Visible light RC-LED with low etendue, high colour purity, small beam divergence, and high efficiency. Currently available in blue and green (wavelengths available on request).
Micro-RC-LED array for chip-to-chip and die-to-die optical interconnects targeting <1 pJ/bit power dissipation and 2 GHz per channel (>100 Gbps aggregate bandwidth).
High power visible RC-LED array for demanding illumination and sensing applications.
Compared to all prior InP VCSEL approaches, InPHRED's homoepitaxial nanoporous DBR is uniquely manufacturable at commercial scale and low cost.
| Heteroepitaxial DBR Bandwidth10, RayCan |
AlAs/GaAs on GaAs IQE |
Wafer fusion BeamExpress, Trumpf |
Double dielectric DBR Vertilas |
InPHRED nanoporousOur approach | |
|---|---|---|---|---|---|
| DBR epitaxy | Difficult heteroepitaxy | Mature AlGaAs | Mature AlGaAs | N/A | Homoepitaxy, mature |
| Wavelength range | 1,300–1,600 nm | Up to 1,300 nm | 1,300–1,600 nm | 1,300–1,600 nm | 1,300–2,300 nm |
| Active region | ✓ Mature | ⚠ Reliability issues | ✓ Mature | ✓ Mature | ✓ Mature |
| Monolithic fab | Wafer-level | Wafer-level | ✗ Not scalable | ✗ Not scalable | Wafer-level |
| Volume production | ✗ Difficult | ⚠ Marginal | ✗ Difficult | ✗ Difficult | ✓ Excellent |
| Cost | Medium | Medium | High | High | Low |